[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-6] [The 44th Paper Award Speech] Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate
by high-temperature gas-source method

〇Norihiro Hoshino¹, Isaho Kamata¹, Takahiro Kanda², Yuichiro Tokuda², Hironari Kuno², Hidekazu Tsuchida¹ (1.CRIEPI, 2.MIRISE Technologies Corporation)

Keywords:Silicon Carbide, Crystal Growth, Dislocation Reduction

To realize carbon neutrality, enhancement of power device supply is an important issue. SiC bulk crystal growth with high-speed and high-quality is expected to contribute to improving productivity of SiC power devices. We have succeeded in SiC single crystal at a growth rate of ~3 mm/h, which is higher than the crystal grown by a general sublimation method, using high-temperature gas method. In this presentation, we report the results of reduction of dislocation density during SiC crystal growth with high growth rate, and the mechanism of dislocation reduction presumed from the results.