[15p-A404-1~19] 6.1 Ferroelectric thin films

[15p-A404-6] 【Highlighted Presentation】Development of an operando laser-based photoemission electron microscope capable of characterizing ferroelectric properties

〇Hirokazu Fujiwara¹, Yuki Itoya², Masaharu Kobayashi³, Cedric Bareille^4,5, Shik Shin^5,6, Toshiyuki Taniuchi^4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)

Keywords:ferroelectric, oxide device, photoelectron emission microscopy

Ferroelectric capacitors with HfZrO₄ (HZO) interlayer exhibit variations in remanent polarization values when AC stress is applied. In order to reveal the mechanism of this polarization variation, we have developed a laser-based photoemission electron microscope that can characterize ferroelectric properties, which is rare in the world. We succeeded in reproducing the cycling stress characteristics of typical HZO by the system. This result will lead to the elucidation of the mechanism of the polarization variation.