[15p-A404-1~19] 6.1 Ferroelectric thin films

△ [15p-A404-7] Evaluation of dielectric breakdown of ferroelectric HfO₂ capacitors using laser-photoelectron emission microscopy

〇Yuki Itoya¹, Hirokazu Fujiwara², Cedric Bareille^3,4, Shik Shin^4,5, Toshiyuki Taniuchi^3,4, Masaharu Kobayashi^1,6 (1.IIS, 2.ISSP, 3.GSFS, 4.MIRC, 5.Univ. of Tokyo, 6.d. lab)

Keywords:Ferroelectric, Oxide device, Photoelectron emission microscopy

Ferroelectric HfO₂ (FE-HfO₂)-based capacitors show dielectric breakdown earlier than perovskite-based capacitors. In this study, by operand observation of time-dependent dielectric breakdown using laser-based photoemission electron microscopy, we observed that the capacitors with short lifetimes were broken at the edge of the electrode. This result indicates that for short-lifetime capacitors, the shape of capacitor is one of the factors that determine the time until breakdown. Our findings would lead to the elucidation of the mechanism of breakdown of FE-HfO₂ capacitor.