[15p-A404-1~19] 6.1 Ferroelectric thin films

[15p-A404-8] Improvement in ferroelectricity of Hf_0.5Zr_0.5O₂ thin film followed by nitrogen plasma treatment on bottom electrode

〇Hiromi Hayakawa¹, Sho Tanaka¹, Minoru Noda¹ (1.Kyoto Inst. Tech Univ.)

Keywords:ferroelectronic, plasma treatment

As a proposal for improving more the ferroelectricity of HZO thin films, we have investigated whether the ferroelectric properties can be improved by improving the HZO/TiN interface by performing nitrogen plasma treatment on the TiN substrate surface to sufficiently suppress the leakage current caused by the properties near the HZO/TiN interface. At the same time, we also investigated the oxygen vacancy density effective for the formation of the o-phase by controlling the oxygen atmosphere conditions during RTA and film deposition. We also investigated whether the ferroelectric properties of HZO thin films deposited on Pt substrates by nitrogen plasma treatment improve the ferroelectric properties as described above.