[15p-A404-1~19] 6.1 Ferroelectric thin films

△ [15p-A404-9] Effects on Electrical Characteristics of Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films by Applying Several Kind of Electric Field during RTA

〇(M2)Sho Tanaka¹, Takumi Hayakawa¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Keywords:Ferroelectric

Recently, it has been reported that ultrathin films of hafnia-based ferroelectric thin films with thicknesses of less than 10 nm are possible. The origin of this HfO₂ family ferroelectric films is a metastable o-phase, and various methods have been used to stabilize it. In this study, we investigated the effect of alternating electric field application during annealing on the ferroelectricity of Hf_0.5Zr_0.5O₂. As a result, we observed clearly the reduction of imprint phenomena and increased remanent polarization. Further improvement in ferroelectric properties are expected.