[15p-B401-1~18] 15.4 III-V-group nitride crystals

▼ [15p-B401-6] Fabrication of low-forward voltage red InGaN LEDs

〇(DC)Pavel Sergeyevich Kirilenko¹, Daisuke Iida¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

Keywords:InGaN LED, Energy conversion efficiency

Red InGaN-based light-emitting diodes (LEDs) usually show a high forward voltage^[1,2], resulting in the device’s high power consumption. We report improvement in the I–V performance of red InGaN-based LEDs grown on conventional c-plane-patterned sapphire substrates, in comparison to the previous publication of our group^[3]. We utilize the red single-quantum-well active layer which results in a 628 nm electroluminescence spectrum peak with full width at half maximum of 54.5 nm, as shown in Figure 1. Figure 2 demonstrates that the forward voltage at injection current density of 10 A/cm²has been reduced from 2.96 V ^[3]to 2.76 V due to improvements in the device epistructure and fabrication process. Namely, the leakage current-inducing non-radiative recombination on devices’ sidewalls was suppressed using current-blocking region formation by hydrogen plasma passivation of selected areas in the device’s p-side ^[4].
These results are an important update in this research field, further improving the performance of the pure-red low-forward voltage InGaN-based LEDs.