The 70th JSAP Spring Meeting 2023

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 15, 2023 1:30 PM - 6:15 PM E102 (Building No. 12)

Mamoru Furuta(Kochi Univ. of Tech.), Keisuke Ide(Tokyo Tech), Ken Goto(Tokyo Univ. Agri. and Tech.)

2:45 PM - 3:00 PM

▲ [15p-E102-6] Metal–semiconductor transition of hydrogen-doped In2O3 via solid-phase crystallization.

〇XIAOQIAN WANG1, Mamoru Furuta1 (1.Kochi Univ. of Tech.)

Keywords:oxide semiconductor, indium oxide

We reported the metal-semiconductor transition (MST) of hydrogen-doped indium oxide (InOx:H) films via low-temperature solid phase crystallization (SPC); however, the MST mechanism has not been clarified. In this presentation, the effect of oxygen and hydrogen during the deposition on the MST of SPC-InOx:H films will be discussed.