[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-E102-7] In₅GaZnO₁₀ thin-film transistors fabricated by sputtering deposition

〇Toshiki Nakanowatari¹, Yuta Watanabe¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

Keywords:InGaZnO, In5GaZnO10, Oxide Thin-Film Transistor

Recently, InGaZnO has attracted attention as a semiconductor material for thin-film transistors (TFTs) to replace amorphous silicon (a-Si) and poly silicon (poly Si), and further mobility improvement in InGaZnO TFTs is required. In this study, we fabricated TFTs with sputtered In₅GaZnO₁₀ as the channel layer and investigated their characteristics. Especially, we report on the effects of preservation in air.