[15p-PA02-1~12] 8 Plasma Electronics (Poster)

[15p-PA02-4] Effects of plasma-generation power on chemical states of films, deposited during acetylene plasma

Tatsuya Nakai¹, Atsuya Kuwada¹, Yuto Ooishi¹, Ryo Sasamoto¹, 〇Masanori Shinohara¹, Satoshi Tanaka², Takashi Matsumoto² (1.Fukuoka Univ., 2.Tokyo Electron Technology Solutions Limited)

Keywords:amorphous carbon film, chemical bonding states, supplied power

Effect of RF power supplied to acetylene plasma on the chemical bonding states of deposited films are investigated with MIR-IRAS (Multiple-Internal-Reflection Infrared Absorption Spectroscopy). The spectroscopic data shows with the increases of RF power, the quantity of the sp³-CH₂ components decreases but that of C=C bonding components decreases.