[15p-PB03-1~15] 8 Plasma Electronics (Poster)

[15p-PB03-14] RF power dependence of SiO:CH films deposited from TMVS

〇Yuki Nakaizumi¹, Yasushi Inoue¹, Osamu Takai² (1.Chiba Inst. Technol., 2.Kanto Gakuin Univ.)

Keywords:CCP-CVD, SiO:CH, Superhydrophobic

We have studied the deposition process of SiO:CH fine particles prepared by CVD method to form SiO:CH fine particle deposition films with surface micro-convex structures. In this study, we aimed to clarify the effect of RF power on the SiO:CH film quality and deposition state. From the macro images, it is considered that polymerization did not occur in the gas phase when the RF power was increased, because the dissociation reaction was dominant in the vicinity of the driving electrode rather than the polymerization reaction that produced the fine particles.