[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-7] Structural evaluation of GaAs_1-xBi_x thin film on (001)GaAs substrate (1)TEM evaluation of defects in annealed LTG-GaAs_1-xBi_x thin film

〇Osamu Ueda¹, Noriaki Ikenaga², Yukihiro Horita³, Yuto Takagaki³, Fumitaka Nishiyama³, Mitsuki Yukimune⁴, Fumitaro Ishikawa⁵, Yoriko Tominaga³ (1.Meiji Univ., 2.Kanazawa Inst. Tech., 3.Hiroshima Univ., 4.Ehime Univ., 5.Hokkaido Univ.)

Keywords:GaAsBi, MBE, defect

We have evaluated defects in annealed low-temperature-grown (LTG)-GaAs_1-xBi_x thin film by TEM. We found slightly different features and distributions of the defects as follows: 1) As-precipitates are generated only at the epi/sub interface; 2) although Bi-rich GaAs_1-xBi_x-precipitates and Bi-precipitates are uniformly distributed, the Bi-precipitates are V- and Λ-shaped in the upper and lower regions of the GaAs_1-xBi_x-layer, respectively. We discuss origins for these different results from viewpoint of defect generation.