[16a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

△ [16a-A301-6] Investigation of low-temperature nitridation process to 4H-SiC/gate dielectric interface

〇Ryu Sasaki¹, Tatsumi Nakashima¹, Takashi Onaya², Koji Kita^1,2 (1.The Univ. of Tokyo, 2.School of Frontier Sci., The Univ. of Tokyo)

Keywords:silicon carbide, nitridation, metal-oxide-semiconductor

We explored conditions that allow sufficient passivation of the 4H-SiC/gate dielectric interface even at low temperature (1000℃) with NO annealing process. As a result, we found that although thermal oxidation of the SiC surface is greatly suppressed by the low temperature, nitrogen incorporation can be increased by using a thin SiO₂ deposited film to the same level of the conventional method. Thus, the efficiency of nitrogen incorporation can be improved not only by the processing temperature but also by the formation method and type of dielectric film.