[16a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

▼ [16a-A301-5] Understandings of the kinetics of N-incorporation and N-removal reactions for the 4H-SiC surface using the SiC consumption rate as an essential factor

〇(D)Yang Tianlin¹, Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci. , The Univ. of Tokyo)

Keywords:SiC surface nitridation kinetics, N-incorporation reaction, N-removal reaction

Based on our previous finding that the balance between N-incorporation and N-removal reaction determines the saturated surface N density, in this study, we further proposed that both N-incorporation and N-removal rate could be described by using the SiC consumption rate as the essential factor. The integrity of the model was discussed experimentally for various conditions.