[16a-A408-1~10] 6.2 Carbon-based thin films

[16a-A408-10] [The 53rd Young Scientist Presentation Award Speech] Development of normally-off vertical diamond MOSFET using C-Si-O sidewall channel for high-power and high-speed switching complementary inverter

〇Kento Narita¹, Kosuke Ota¹, Yu Fu¹, Chiyuki Wakabayashi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Inst.)

Keywords:Diamond, MOSFET, Vertical-type

In this study, we fabricated vertical diamond MOSFET with Oxidized Si terminated diamond(C-Si-O) sidewall channel using Si molecular beam deposition (Si-MBD) in ultrahigh vacuum. As a result, threshold voltage (V_th): -7.1 V and maximum drain current density (I_D): 187 mA/mm,6240 A/cm² were obtained and we achieved the highest maximum drain current density in a normally-off operation vertical diamond FET.