[16a-A408-1~10] 6.2 Carbon-based thin films

△ [16a-A408-9] High frequency operation of C-Si-O channel normally-off diamond MOSFETs

〇(B)Xuezhen Jia¹, Akira Takahashi¹, Yu Fu^1,3, Fuga Asai¹, Kousuke Ota¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Inst., 3.UESTC)

Keywords:Diamond, MOSFETs, normally-off operation

In this study, we fabricated the first RF diamond MOSFET with C-Si-O channel, and we investigated its normally - off operation and RF characristic. C-Si-O channel diamond MOSFET achieved normally – off operation with V_DS = -10 V, and the maximum drain current density(I_D) is 37 mA/mm at V_GS = 20V.