[16a-A408-1~10] 6.2 カーボン系薄膜

▼ [16a-A408-6] Low Specific Contact Resistance Nanocarbon Ohmic Contacts Fabricated by Coaxial Arc Plasma Deposition on Semiconducting Diamonds and Their Device Applications

〇(D)Sreenath Mylo Valappil^1,2、Shinya Ohmagari²、Abdelrahman Zkria¹、Tsuyoshi Yoshitake¹ (1.Kyushu Univ.、2.AIST)

キーワード：Ohmic contacts, Phosphorus doped diamond, Schottky barrier diodes

The material properties of diamonds have received great attention in recent years to realize advanced device fabrication. The formation of low contact resistance ohmic contacts to semiconducting diamonds is inevitable for the practical use of diamond-based devices to reduce power loss. Indeed, apart from their low specific contact resistance (ρ_c), an ideal ohmic contact should be mechanically adhesive, thermally stable, and corrosion resistant to attain its maximum operational efficiency. In this work, we report the alternative nanocarbon-based ohmic contacts to n and p-type semiconducting diamonds. Moreover, the excellent corrosion resistance of nanocarbon ohmic electrodes in boiling acid solution is utilized for stabilizing the diode parameters of Schottky barrier diodes (SBDs) formed on wet chemical oxygen terminated (O-terminated) p-type diamond.