[16a-A408-1~10] 6.2 Carbon-based thin films

△ [16a-A408-7] Hysteresis reduction of diamond MOSFET by continuous process of surface termination treatment and oxide film deposition

〇Kai Sato¹, Kimiyoshi Ichikawa¹, Kan Hayashi¹, Masahiko Ogura², Toshiharu Makino², Hiromitsu Kato², Takeuchi Daisuke², Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹, Tubasa Matsumoto¹ (1.Kanazawa Univ., 2.AIST.)

Keywords:diamond, MOSFET

Inversion type diamond MOSFETs have had a problem with hysteresis characteristics in round-trip measurement of transfer characteristics (drain current ID - gate voltage VG). In this presentation, we report on the hysteresis reduction in the transfer characteristics by conducting the process of diamond surface termination and gate oxide film deposition continuously. The continuous process seems to approach the ideal interface due to the removal of the contamination layer.