[16a-D405-1~8] 6.6 Probe Microscopy

[16a-D405-5] High-low frequency Kelvin Probe Force Spectroscopy for Measuring the Interface State Density

Ryo Izumi¹, Masato Miyazaki¹, Yan Jun Li¹, 〇Yasuhiro Sugawara¹ (1.Osaka Univ.)

Keywords:Interface state density, semiconductor, Kelvin probe force microscopy

In semiconductor devices such as field-effect transistors, the semiconductor interface state that exists within the band gap greatly affects the device's operating characteristics. Therefore, there is a need for a method to directly measure semiconductor interface states with nanoscale spatial resolution. In this report, we describe a new method based on force detection that can measure the density of interface states at semiconductor surfaces with nanoscale spatial resolution.