[16a-D519-1~14] CS.1 Code-sharing Session of 2.3 & 7.4 &7.5

[16a-D519-1] Detection of Single Ion Hits on Gallium Nitride Semiconductors

〇Taiki Fujita^1,2, Shin-ichiro Sato², Manato Deki³, Hirotaka Watanabe⁴, Shugo Nitta⁴, Yoshio Honda⁴, Hiroshi Amano^3,4, Hidetsugu Tsuchida¹ (1.Kyoto Univ., 2.QST, 3.Nagoya Univ. VBL, 4.Nagoya Univ. IMaSS)

Keywords:single ion, semiconductor, GaN

To realize quantum devices that manipulate isolated impurities as qubits, deterministic single ion implantation technique which controls the position and number with nanometer precision has to be developed. In this study, we analyze transient currents generated by single alpha-rays on gallium nitride semiconductors and discuss the detectable ion implantation conditions.