First-principles Study on Silicon Emission from Interface into Oxide

Hiroyuki Kageshima; Toru Akiyama; Kenji Shiraishi

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[16p-B508-1~17] 13.3 Insulator technology

Thu. Mar 16, 2023 1:00 PM - 5:45 PM B508 (Building No. 2)

Noriyuki Taoka(Nagoya Univ.), Yoshiki Yamamoto(Renesas Electronics)

4:45 PM - 5:00 PM

[16p-B508-14] First-principles Study on Silicon Emission from Interface into Oxide

〇Hiroyuki Kageshima¹, Toru Akiyama², Kenji Shiraishi³ (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)

Keywords:Si oxidation, Si emission, first-principles calculation

During the oxidation of Si, it is known that Si atoms are emitted from the interface into the oxide film. Using a larger unit cell than before, we attempt to identify the exact atomic structures along the diffusion path, and confirm the validity of interfacial Si emission.