[16p-B508-1~17] 13.3 Insulator technology

[16p-B508-4] Demonstration of remnant polarization enhancement in HfO₂ thin films induced by polarization switching under mechanical tensile strain

〇Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci., The Univ. of Tokyo)

Keywords:ferroelectricity

The effect of structural strain on the expression of ferroelectricity and the variation of the magnitude of polarization in HfO₂ was directly verified by applying mechanical strain by four-point bending. It was shown that the ferroelectric phase is strongly induced by ~0.1 % of tensile strain. The results also support the model that the magnitude of waking-up increases with tensile strain.