2:15 PM - 2:30 PM
[16p-B508-5] Stabilization of ferroelectric phase in HfO2 thin films by applying mechanical strain during annealing process
Keywords:HfO2-based ferroelectric films, mechanical strain
It has been considered that structural strain in tensile direction caused by substrates and electrodes stabilizes ferroelectric orthorhombic phase in HfO2 thin films, but there are no reports which investigated the effect of structural strain experimentally and directly. In this study, we applied mechanical strain during annealing process and investigated the stabilization of orthorhombic phase directly and quantitatively. As a result, we found that tensile stress plays an important role to form and stabilize orthorhombic phase in HfO2 films.