[16p-D511-1~11] 15.5 IV族結晶，IV-IV族混晶

▲ [16p-D511-7] CVD growth of Ge epitaxial layer on patterned Si substrate (2)

〇(M2)FAIZ FAIZ MOHD¹、Jose A. Piedra-Lorenzana¹、Takeshi Hizawa¹、Tetsuya Nakai²、Yasuhiko Ishikawa¹ (1.Toyohashi Uni of Tech、2.SUMCO)

キーワード：Germanium, CVD growth, Ge epitaxial layer

A Ge epitaxial film directly grown on Si is inevitably required for a near-infrared photodetector in Si photonics. A high-quality Ge layer is required for a high-performance device despite a large lattice mismatch of 4% between Ge and Si. In the previous meeting, we reported that the threading dislocation density (TDD) in Ge is significantly reduced when the Ge film is grown on a submicron-patterned Si substrate. The TDD reduction is derived from the trapping of dislocations in the trench regions between the Si patterns, as revealed by the transmission electron microscope (TEM) observations. In this work, to investigate the mechanism for the dislocation trapping, the structural evolution is evaluated for Ge films with different Ge thicknesses.