1:30 PM - 3:30 PM
[16p-PA04-4] Fabrication Process of Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistor of 4H-SiC Utilizing Wet Oxidation
Keywords:4H-SiC, Wet oxidation, MOSFET
In this study, fabrication process of 4H-SiC MOSFET utilizing wet oxidation was developed and the transistor operation was confirmed. While the drain current can be modulated and controlled over 6 orders of magnitude by applying a positive gate voltage, process development is needed to improve the problems of reduced channel mobility and increased Al/n+-type SiC contact resistance. In addition, the parasitic bipolar effect may have become apparent, and ion implantation conditions need to be reexamined to lower p-Well and Al/p-type SiC contact resistance.