[16p-PA05-1~3] 15.6 Group IV Compound Semiconductors (SiC)

[16p-PA05-3] Development of a new charge transfer interatomic potential for 4H-SiC and application for the contraction of partial BPDs

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:dislocation, molecular dynamics, SiC

In order to clarify BPD-TED conversion in 4H-SiC using molecular dynamics, we developed a new interatomic potential including the effect of charge transfer. This potential can reproduce dislocations near surface of SiC more precisely. The calculation using this potential applied for the contraction of partial BPDs found that the partial BPDs in the vicinity of the surface can contract easily.