[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

[17p-A301-10] Theoretical studies on behavior of Mg acceptors in GaN

〇(P)Kaori Seino^1,2, Atsushi Oshiyama¹, Ryosuke Sakurai³, Kenji Shiraishi^1,3 (1.IMaSS, Nagoya Univ., 2.Jena Univ., 3.Graduate School of Engineering, Nagoya Univ.)

Keywords:p-GaN, diffusion, first-principles calculations

GaN is expected as a material for power electronics in semiconductor technology due to its superior properties compared with the current principal material, Si. Selective-area doping of p-type dopants is one of the most important techniques to realize GaN power devices. Recently, p-type doping in specific areas of GaN has been successful using Mg-ion implantation and subsequent ultra-high-pressure annealing. Therefore, further understanding of behavior of Mg acceptors in GaN is indispensable and highly demanded. We perform density-functional calculations that reveal detailed properties and atomic diffusion of Mg in GaN.