[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

[17p-A301-17] Carrier scattering mechanism of 2DEG in InAlN/AlN/GaN structures depending on AlN thickness

〇Yuta Komori¹, Kazuo Tsutsui¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kiyotaka Miyano², Takashi Yoda^2,1, Ichirou Mizushima^1,2, Masayuki Tsukui² (1.Tokyo Tech, 2.NuFlare Technology)

Keywords:InAlN GaN HEMT, HEMT

Compared to the conventional AlGaN/GaN HEMT devices, InAlN/GaN HEMT is known to be the strong candidate for high frequency usage, due to its high reliability and high 2DEG density.
Although it has been widely known that its low 2DEG mobility could be improved by the insertion of a 1nm thick AlN spacer layer, the mechanism still remains unknown. In our past research, we have investigated the scattering mechanism through the research of the dependence of temperature on 2DEG mobility. In this paper, we have investigated the dependence of carrier density on 2DEG mobility.