Analysis of alteration layer formed by treating AlN with saturated vapor pressure water

Eri Matsubara; Ryota Hasegawa; Toma Nishibayashi; Ayumu Yabutani; Ryoya Yamada; Ryosuke Kondo; Sho Iwaya; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Shinya Kumagai; Takahiro Maruyama; Shintaro Kobayashi; Taiji Yamamoto; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-B401-1~15] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2023 1:15 PM - 5:30 PM B401 (Building No. 2)

Hideaki Murotani(Tokuyama College), Maki Kushimoto(Nagoya Univ.), Takao Oto(Yamagata Univ.)

1:30 PM - 1:45 PM

△ [17p-B401-2] Analysis of alteration layer formed by treating AlN with saturated vapor pressure water

〇(M1)Eri Matsubara¹, Ryota Hasegawa¹, Toma Nishibayashi¹, Ayumu Yabutani¹, Ryoya Yamada¹, Ryosuke Kondo¹, Sho Iwaya^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Shinya Kumagai¹, Takahiro Maruyama¹, Shintaro Kobayashi³, Taiji Yamamoto³, Hideto Miyake² (1.Meijo University, 2.Mie University, 3.Rigaku Corp.)

Keywords:AlGaN, AlN