The 70th JSAP Spring Meeting 2023

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Mar 17, 2023 1:00 PM - 5:00 PM B414 (Building No. 2)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Hajime Tanaka(阪大)

4:00 PM - 4:15 PM

[17p-B414-12] Circuit modeling of MOS capacitors with interface traps

〇Koichi Fukuda1, Junichi Hattori1, Hidehiro Asai1, Toshihide Ide1, Mitsuaki Shimizu1 (1.AIST)

Keywords:Circuit Simulation, interface traps

Device model in the circuit simulation is realized including the interface trap transient effects and stable C-V results are obtained for MOS capacitors.