[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[17p-B414-13] Carrier Mobility Modeling for MONOS SiN Layer Considering Electric Field and Temperature Dependence

〇Keitaro Naito¹, Hiroshi Takeda¹, Takayuki Okura¹, Junji Shimokawa¹, Muneyuki Tsuda¹, Hiroyuki Yamashita¹, Keiichi Sawa¹, Takashi Kurusu¹ (1.KIOXIA Corporation)

Keywords:TCAD, Flash memory

Carrier dynamics in SiN layer is important for accurate simulation of electrical characteristics of 3D MONOS memory cells. Trap and de-trap phenomena in SiN layer has been intensively investigated in many researches, while simple constant mobility has often been used for other transport mechanisms. In this paper, we have investigated effect of electric field and temperature dependency of carrier mobility on electrical characteristics of MONOS memory cell. The electric field and temperature dependency was modeled based on a Monte Carlo simulation result for bulk-SiN. The developed mobility model was applied for our drift diffusion based TCAD simulation together with a trap and de-trap model. Electric field and temperature dependency of carrier mobility in SiN should be considered for further accurate simulation of MONOS memory cell characteristics.