The 70th JSAP Spring Meeting 2023

Presentation information

Print

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[17p-D419-1~15] 6.4 Thin films and New materials

Fri. Mar 17, 2023 1:30 PM - 5:45 PM D419 (Building No. 11)

Yuji Muraoka(Okayama Univ.), Ryota Shimizu(Tokyo Tech)

5:15 PM - 5:30 PM

▲ [17p-D419-14] ReRAM characteristics utilizing pentacene/LaBxNy insulator stacked structure

〇Li Fenghao1, Eun Ki Hong1, JiaAng Zhao1, Ohmi Shun-ichiro1 (1.Tokyo Inst. of Technology)

Keywords:LaBxNy insulator

Resistive RAM (ReRAM) is one of the emerging nonvolatile memory technologies because it has the advantages of high-density integration, high switching speed, and low power consumption.
We have reported OFET characteristics utilizing pentacene and LaBxNy insulator. In this study, ReRAM characteristics utilizing pentacene/LaBxNy insulator stacked structure was investigated.