[17p-D419-1~15] 6.4 薄膜新材料

▲ [17p-D419-14] ReRAM characteristics utilizing pentacene/LaB_xN_y insulator stacked structure

〇Li Fenghao¹、Eun Ki Hong¹、JiaAng Zhao¹、Ohmi Shun-ichiro¹ (1.Tokyo Inst. of Technology)

キーワード：LaBxNy insulator

Resistive RAM (ReRAM) is one of the emerging nonvolatile memory technologies because it has the advantages of high-density integration, high switching speed, and low power consumption.
We have reported OFET characteristics utilizing pentacene and LaB_xN_y insulator. In this study, ReRAM characteristics utilizing pentacene/LaB_xN_y insulator stacked structure was investigated.