The frontline of atomic layer deposition technique for oxide semiconductor devices

Toshihide Nabatame

Presentation information

Symposium (Oral)

Symposium » What is next killer application after display? Leading edge technology of oxide semicondutor

[17p-E302-1~8] What is next killer application after display? Leading edge technology of oxide semicondutor

Fri. Mar 17, 2023 1:30 PM - 5:55 PM E302 (Building No. 12)

Yukiharu Uraoka(NAIST), Masaharu Kobayashi(Univ. of Tokyo), Keiji Ikeda(KIOXIA)

2:30 PM - 3:00 PM

[17p-E302-3] The frontline of atomic layer deposition technique for oxide semiconductor devices

〇Toshihide Nabatame¹ (1.NIMS)

Keywords:Atomic layer deposition, InOx-based metal oxide semiconductor, C-doped InOx channel

We report the frontline of atomic layer deposition technique of InO_x-besed metal oxide semiconductor channel fabrication for oxide semiconductor devices including thin-film transistor, FeFET with HfO₂-based ferroelectric film and CFET.