[17p-E302-1~8] What is next killer application after display? Leading edge technology of oxide semicondutor

[17p-E302-4] Highly Scalable c-axis crystalline In-Ga-Zn Oxide FETs and their applications

〇Hitoshi Kunitake¹, Jun Koyama¹, Kazuki Tsuda¹, Satoru Saito¹, Naoki Okuno¹, Tatsuya Onuki¹, Masahiro Takahashi¹, Fumito Isaka¹, Yasuhiro Jinbo¹, Hidekazu Miyairi¹, Ryota Hodo¹, Shinya Sasagawa¹, Shunichi Ito¹, Ryo Arasawa¹, Ryosuke Motoyoshi¹, Masahiro Wakuda¹, Tsutomu Murakawa¹, Yuto Yakubo¹, Takanori Matsuzaki¹, Kiyoshi Kato¹, Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.)

Keywords:Oxide Semiconductor, BEOL, display

We are developing c-axis aligned crystalline In-Ga-Zn Oxide FETs (OSFETs) to achieve higher integration in circuits. The OSFET can be fabricated in the Back-end-of-line process of the existing CMOS process because of its low-temperature process. Therefore, OSFETs have the potential to achieve miniaturization at low cost. OSFETs are widely used in displays, and are currently attracting attention as a device material for LSIs. In this presentation, I will introduce the possibilities of OSFETs, their miniaturization technology, and application examples. We hope that c-axis aligned crystalline In-Ga-Zn Oxide FETs, which will be discussed in this presentation, will be widely used as soon as possible and become the key to low power consumption in various areas.