[17p-E302-1~8] What is next killer application after display? Leading edge technology of oxide semicondutor

[17p-E302-5] Prospects of Oxide Semiconductor Devices – Focusing on Ferroelectric-Gate Transistors

〇Eisuke Tokumitsu¹ (1.JAIST)

Keywords:ferroelectric, oxide semiconductor, nonvolatile memory

In this presentation, we introduce our research on oxide-channel ferroelectric gate transistors and discuss future prospects. First, we point out that the ferroelectric gate enables large charge density control in addition to nonvolatile memory functions and demonstrate transistor operation of the devices with conductive indium-tin-oxide (ITO) channel. Next, NAND structures using ITO channel ferroelectric gate transistors are demonstrated. Finally, prospects for 3D NAND structures are discussed.