Symposium (Oral)

[17p-E302-1~8] What is next killer application after display? Leading edge technology of oxide semicondutor

Fri. Mar 17, 2023 1:30 PM - 5:55 PM E302 (Building No. 12)

Yukiharu Uraoka(NAIST), Masaharu Kobayashi(Univ. of Tokyo), Keiji Ikeda(KIOXIA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[17p-E302-1] Exploration of novel functional amorphous oxide semiconductors

〇Keisuke Ide¹, Hideo Hosono², Toshio Kamiya² (1.MSL, Tokyo Tech, 2.MDXES, Tokyo Tech)

2:00 PM - 2:30 PM

[17p-E302-2] IGZO Deposition-Technique Development for Semiconductor-Device Mass-Production

〇Keiichi Nagasaka¹, Hiroyuki Iwashita², Hao Zeng², Shota Ishibashi², Takahiro Yoshimatsu¹, Hisashi Warashina¹, Hiroyuki Tomita¹, Toru Kitada², Hiroki Maehara¹ (1.TEL, 2.TEL Tech. Solu.)

2:30 PM - 3:00 PM

[17p-E302-3] The frontline of atomic layer deposition technique for oxide semiconductor devices

〇Toshihide Nabatame¹ (1.NIMS)

3:05 PM - 3:35 PM

[17p-E302-4] Highly Scalable c-axis crystalline In-Ga-Zn Oxide FETs and their applications

〇Hitoshi Kunitake¹, Jun Koyama¹, Kazuki Tsuda¹, Satoru Saito¹, Naoki Okuno¹, Tatsuya Onuki¹, Masahiro Takahashi¹, Fumito Isaka¹, Yasuhiro Jinbo¹, Hidekazu Miyairi¹, Ryota Hodo¹, Shinya Sasagawa¹, Shunichi Ito¹, Ryo Arasawa¹, Ryosuke Motoyoshi¹, Masahiro Wakuda¹, Tsutomu Murakawa¹, Yuto Yakubo¹, Takanori Matsuzaki¹, Kiyoshi Kato¹, Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.)

3:35 PM - 4:05 PM

[17p-E302-5] Prospects of Oxide Semiconductor Devices – Focusing on Ferroelectric-Gate Transistors

〇Eisuke Tokumitsu¹ (1.JAIST)

4:05 PM - 4:35 PM

[17p-E302-6] Frontiers of AI Computing with Oxide Semiconductors

〇Mutsumi Kimura^1,2, Yuji Miyato¹, Michihiro Shintani³, Mami Fujii⁴, Yusaku Magari⁵, Hidenori Kawanishi¹, Tokiyoshi Matsuda⁴, Toshio Kamiya⁶ (1.Ryukoku Univ., 2.NAIST, 3.Kyoto Inst. Tech., 4.Kindai Univ., 5.Hokkaido Univ., 6.Tokyo Tech)

4:35 PM - 4:50 PM

[17p-E302-7] Atomic layer deposited ternary amorphous oxide semiconductor In-Ga-O toward 3D-integrated device

〇Takanori Takahashi¹, Mutsunori Uenuma¹, Masaharu Kobayashi², Yukiharu Uraoka¹ (1.NAIST, 2.Univ. of Tokyo)

4:55 PM - 5:55 PM

[17p-E302-8] Panel Discussion

〇Masaharu Kobayashi¹, Yukiharu Uraoka², Keiji Ikeda³, Keisuke Ide⁴, Keiichi Nagasaka⁵, Toshihide Nabatame⁶, Hiroshi Kunitake⁷, Eisuke Tokumitsu⁸, Mutsumi Kimura⁹, Akira Nishiyama³ (1.The University of Tokyo, 2.NAIST, 3.KIOXIA, 4.Tokyo Institute of Technology, 5.Tokyo Electron, 6.NIMS, 7.SEL, 8.JAIST, 9.Ryukoku University)

Sessions

Symposium » What is next killer application after display? Leading edge technology of oxide semicondutor