[17p-PB07-1~15] 15.4 III-V-group nitride crystals

[17p-PB07-10] Evaluation of BGaN neutron detectors fabricated using in-situ annealing

〇(M1)Yusaku Hashimoto¹, Tomoyuki Natsume¹, Shun Nishikawa¹, Seiya Kawasaki², Genichiro Wakabayashi³, Yoshio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki⁵, Takayuki Nakano^1,5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

Keywords:semiconductor, detector, neutron