[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

[18a-A301-4] Characteristics of GaN-MOSFETs with the Al-doped surface

〇Katsunori Ueno¹, Tsurugi Kondo¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1.Fuji Electric co., 2.NICHe, Tohoku Univ.)

Keywords:GaN, MOSFET, channel mobility

Improving electron mobility of MOSFETs is strongly desired for the practical use of GaN-based power devices. In the previous work, we reported that MOSFETs formed on the annealed surface after AlN deposition provide high mobility. In this report the higher channel mobility can be obtained at the higher annealing temperature. The higher Al concentration at the surface was observed at the higher annealing temperature.