[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

[18a-A301-5] Demonstration of switching operation in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo¹, Yamamoto Shotaro¹, Shinagawa Tomohiro¹, Watahiki Tatsuro¹, Furuhashi Masayuki¹, Nishikawa Kazuyasu¹, Egawa Takashi² (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Nagoya Inst. of Tech.)

Keywords:HEMT, GaN, EID

Planer-type EID AlGaN/GaN MOS-HEMTs using fully depleted AlGaN/GaN epitaxial layer were fabricated. The EID-HEMTs with gate width of 150 mm exhibited E-mode operation and stable swtiching operation at drain voltage of 200 V and drain current of 7A.