[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

[18a-A301-3] Improvement of V_th-μ_ch characteristics by suppressing interfacial oxidation of GaN MOSFET

〇Tsurugi Kondo¹, Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1.Fuji Electric, 2.NICHe, Tohoku Univ.)

Keywords:semiconductor, MOSFET, interfacial oxidation

Suppression of interfacial oxidation in GaN MOSFET has possibility to simultaneously achieve suppression of threshold shift caused by PDA, and high channel mobility. Therefore, in this study, we investigated an insulating film deposition method that suppresses interfacial oxidation, and verified its effect when applied the technique to gate insulating film deposition. As a result, threshold shift and channel mobility clearly depended on the insulating film deposition conditions.