[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

△ [18a-A301-8] Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations

〇Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Yoshio Honda², Hirotaka Ikeda⁴, Kenji Iso^2,4, Hiroshi Amano^2,3,5 (1.Nagoya Univ., 2.IMaSS, 3.VBL, Nagoya Univ., 4.Mitsubishi Chemical, 5.Akasaki R.C.)

Keywords:low dislocation density GaN substrate, p-n junction diode, reverse bias leakage current

The reverse JV characteristics and Arrhenius plot were compared between device (a), which had a TDD of 7.7×105[cm-2] in HVPE substrate, and device (b), which contained no observable TDs in SCAAT™-LP substrate. In the temperature range of 300-380 K, the leakage current of device (a) showed no significant change. In the temperature range of 400-480 K, the leakage current of both devices increased. we will introduce the physical mechanism of reverse leakage current of both devices.