[18a-A302-1~6] 6.3 Oxide electronics

▲ [18a-A302-3] Modeling of Memristive Devices Using Phase-Field Method

John Sevic^1,2, 〇Nobuhiko P Kobayashi^3,4,5,6 (1.Electrical Engineering, 2.Embry-Riddle Aeronautical University, 3.Nanostructured Energy Conversion Technology and Research (NECTAR), 4.Electrical and Computer Engineering Department, 5.Baskin School of Engineering, 6.University of California Santa Cruz)

Keywords:resistive switch, memristive, phase field

Resistive switching films exhibit persistent electrical conductivity modulation, central to their operation as next-generation non-volatile memory and neuromorphic computing. Various qualitative models have been proposed to study transport phenomena of resistive switching films that contain a current filament (CF)–Pre-defined CF model. While the pre-defined CF model provides a useful starting point for further quantitative treatment, a precise computable description of formation and dynamical evolution of CF is largely ignored. In this paper, we propose the use of phase-field formulation–Phase-field CF model–to explore the atomic origins of resistive switching films in memristive devices. In our phase-field CF model, stochastic formation of CF during electroformation is formulated as a diffuse interface problem, which illustrates stochastic characteristics of the formation of CF and suggests ramifications of the percolation threshold in determining current-voltage characteristics.