[18a-A302-1~6] 6.3 酸化物エレクトロニクス

▲ [18a-A302-3] Modeling of Memristive Devices Using Phase-Field Method

John Sevic^1,2、〇Nobuhiko P Kobayashi^3,4,5,6 (1.Electrical Engineering、2.Embry-Riddle Aeronautical University、3.Nanostructured Energy Conversion Technology and Research (NECTAR)、4.Electrical and Computer Engineering Department、5.Baskin School of Engineering、6.University of California Santa Cruz)

キーワード：resistive switch, memristive, phase field

Resistive switching films exhibit persistent electrical conductivity modulation, central to their operation as next-generation non-volatile memory and neuromorphic computing. Various qualitative models have been proposed to study transport phenomena of resistive switching films that contain a current filament (CF)–Pre-defined CF model. While the pre-defined CF model provides a useful starting point for further quantitative treatment, a precise computable description of formation and dynamical evolution of CF is largely ignored. In this paper, we propose the use of phase-field formulation–Phase-field CF model–to explore the atomic origins of resistive switching films in memristive devices. In our phase-field CF model, stochastic formation of CF during electroformation is formulated as a diffuse interface problem, which illustrates stochastic characteristics of the formation of CF and suggests ramifications of the percolation threshold in determining current-voltage characteristics.