*Nobuki Kyouno¹, Daisuke Mori¹, Yasuo Takeda¹, Osamu Yamamoto¹, Nobuyuki Imanishi¹ (1. Mie University(Japan))

*Rui IWASAKI¹, Daigorou Hirai¹, Zenji Hiroi¹, Satoshi Hori², Ryoji Kanno² (1. Institute for Solid State Physics, University of Tokyo(Japan), 2. Tokyo Institute of Technology(Japan))

*Teruyuki AKATANI¹, Daisuke MORI¹, Yasuaki MATSUDA², Nobuyuki IMANISHI¹ (1. Mie University(Japan), 2. Osaka Institute of Technology(Japan))

*YUTA KOIZUMI¹, Mengxuan Tang¹, Yong-Gun Lee², Daisuke Mori¹, Yasuo Takeda¹, Nobuyuki Imanishi¹, Osamu Yamamoto¹ (1. Mie University(Japan), 2. samsung Electronics(Korea))

Akira MISHIMA¹, Kouji FUJII¹, Tatsuya MOURI¹, Seiichiro SHIMIZU¹, *yasuki miyazaki¹, Takayuki WATANABE² (1. NIPPON TUNGSTEN CO.,LDT.(Japan), 2. KYUSHU UNIVERSITY(Japan))

*Shinji KANEKO¹, Koichi SHIGENO¹, Tomoya YAMANE¹, Junya SHIMOKAWA¹, Hirotaka FUJIMORI² (1. National Institute of Technology, Ube College (Japan), 2. Graduate School of Yamaguchi University(Japan))

*Makoto YAMAKI¹, Koichi OKAMOTO¹, Akiri URATA¹, Shoichi SATO¹ (1. TOKIN Corporation(Japan))