[1Dp01-13] TF/SE/EMP/MI/MS

[1Dp09S] Growth of Oxygen vacancy stabilized zirconia thin films by reactive HiPIMS

*Naoto Saito¹, Adriano Panepinto², Stephanos Konstantinidis², Ming Yang¹, Tetsuhide Shimizu¹ (1. Tokyo metropolitan university, 2. University of Mons)

Stabilization of the cubic crystal of zirconia at room temperature is an important issue in order to realize zirconia thin films with excellent properties. The oxygen vacancy concentration has major role in stabilization. In this study, we investigated the feasibility of introducing oxygen vacancies into zirconia films by using the peak current stabilization technique based on the R-HiPIMS. As a result, a crystalline phase other than monoclinic appeared.