[1Hp01-06] Semiconductor/Magnetic, Electronic, and Photonic devices/Electronic Material Processing (SE/TF/EMP/MI/MS)

[1Hp05] Novel non-destructive method to evaluate cleaning performances of three-dimensional nanostructures on Si ~ Angle-resolved photoemission spectra of Au resided at the bottoms of deep trenches on Si~

*Shiika Murase¹, Tomoki Higashi², Kouji Inagaki², Kenta Arima² (1. Division of Applied Science, School of Engineering, Osaka University, 2. Department of Precision Engineering, Graduate School of Engineering, Osaka University)

We aim to develop a novel non-destructive method to evaluate the cleaning performance of contaminants and oxides at the bottoms of three-dimensional (3D) nanostructures. In order to achieve this, we apply Angle-Resolved X-ray Photoelectron Spectroscopy (AR-XPS) for 3D structures with high aspect ratios (ARs) such as deep trenches and pores. In this method, to collect photoelectrons from their bottoms, we need to align the detector with the bottoms by adjusting the take-off angle of photoelectrons with a high accuracy. To achieve this, we propose to embed a heterogeneous “landmark” element at some bottoms. To test the feasibility of the proposed method, we took AR-XPS spectra of Au resided at the bottoms of trenches with different ARs (1–6) on Si. The sample was fabricated by metal-assisted chemical etching of Si. It turns out that the signal from the “landmark” element, or Au in this experiment, serves as a guarantee to detect photoelectrons from the bottoms of 3D nanostructures.