[1P01-52] Poster Presentation

[1P39] Synthesis of epitaxial LaNiO₃ thin films by RF sputtering

*Susumu Shiraki¹, Ryosuke Iwase¹, Hibiki Mikawa¹ (1. Nippon Institute of Technology)

LaNiO₃ (LNO) is the most technologically relevant conductive metallic oxide. In this study, we deposited the LNO thin films on an unheated (111) substrate of SrTiO₃ (STO) single crystal by using the RF sputtering, and synthesized the epitaxial LNO by annealing at 500^oC in air with heating rate of 1.4-83^oC /min. We found that low heating rate resulted in high crystallinity of epitaxial LNO. In addition, an XRD reciprocal space map of the LNO/STO(111) revealed that LNO (111)-oriented epitaxial thin-film grew on STO(111) and its orientation relationships were [1-10](111)LNO//[1-10](111)STO and [11-2](111)LNO//[11-2](111)STO.