[1P01-52] Poster Presentation

[1P40] Epitaxial growth behavior of CuPc thin films on underlayers of PTCDI-C8 with large grains

*Shuhei Tanaka¹, Shingo Maruyama¹, Kenichi Kaminaga¹, Yuji Matsumoto¹ (1. School of Engineering, Tohoku University)

Progress in organic semiconductor devices, which offer some advantages, such as their lower production cost and low-temperature processing as well as flexibility, over inorganic semiconductors, are increasingly driven by the development of organic heterostructures. In this study, the growth behavior of heterostructures of copper phthalocyanine (CuPc) on large grains of N,N'-Di-n-octyl-3,4,9,10-perylenetetracarboxylic Diimide (PTCDI-C8) was investigated, in which both the materials were deposited by continuous-wave infrared (CW-IR) laser deposition. We confirmed from out-of-plane and grazing incidence X-ray diffraction measurements that (100)-oriented α-phase CuPc was epitaxially grown on the PTCDI-C8 large grains. Unlike the CuPc thin films without the PTCDI-C8 underlayer, the CuPc on PTCDI-C8 exhibited a film morphology of needle-like grains aligned along the original step edges of the PTCDI-C8 large grain surface.