[3Ga01-10] Surface Science(SS1) Physical Property

[3Ga05] The development of low-temperature scanning tunneling potentiometry (II)

Masayuki Hamada¹, *Masahiro Haze¹, Yukio Hasegawa¹ (1. The Institute for Solid State Physics, The University of Tokyo)

Scanning tunneling potentiometry (STP) enables us to map topography and electrochemical potential distributions simultaneously in atomic scale special resolution and uV level potential sensitivity on the surface under lateral current flowing parallel to the sample surface. We have developed UHV-STP and achieved STP on the Si(111)-(7x7) surface at room temperature. As the next step, we developed UHV-STP working in low temperature where quantum phenomena such as electron localization and confinement effects are expected in the surface electrical conductivity, and succeeded in STP on the striped-incommensurate (SIC) phase of Pb/Si(111) at T=18.4K.