*Yuki Tsuruma¹, Hisanori Nagatomi¹, Nobuhiro Iwase¹, Koji Yamaguchi¹, Daichi Sasaki¹, Emi Kawashima¹, Akira Kaijo¹, Kazuyoshi Inoue¹ (1. Idemitsu Kosan Co., Ltd. (Japan))

15:00 〜 15:15

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors

*Yusaku Magari¹, Prashant Ghediya¹, Yuqiao Zhang^2,3, Yasutaka Matsuo¹, Mamoru Furuta⁴, Hiromichi Ohta¹ (1. Hokkaido Univ. (Japan), 2. Jiangsu Univ. (China), 3. Foshan Instit. for New Materials (China), 4. Kochi Univ. of Tech. (Japan))

15:15 〜 15:30

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors

*Prashant Ghediya¹, Yusaku Magari¹, Yuqiao Zhang^2,3, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1. RIES, Hokkaido Univ. (Japan), 2. IQST, Jiangsu Univ. (China), 3. Foshan Inst. for New Materials (China))

15:30 〜 16:00

[S2-O202-05 (Symposium Invited)] Oxide Field-effect Transistors with Adaptable Functionality

*chuan liu¹ (1. Sun Yat-sen University (China))

Oral Session

[S2-O203] Oral 203

2023年12月12日(火) 16:30 〜 18:30 Session 1 (Room C-1)

Chair: Julia E Medvedeva (Missouri S&T), KIN MAN Yu (City University of Hong Kong)

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16:30 〜 17:15

[S2-O203-01 (Symposium Keynote)] High Performance Functional Oxides for Harsh Environments

*David Samuel Ginley¹, Sarah Shulda¹, Ropert Bell¹, Michael Dizara¹, Brian Gorman ², Heather Slomski², Ryan Ohayre², William Callahan², Nicholas Strange³ (1. NREL (United States of America), 2. Colorado School of Mines (United States of America), 3. SLAC (United States of America))

17:15 〜 17:45

[S2-O203-02 (Symposium Invited)] Magnetron Sputter Epitaxy: High-rate growth of wide and ultra-wide band gap semiconductors

Alexander Hinz^1,2, *Daniel Gloess¹, Katrin Pingen¹, Dominic Hecker¹, Jörg Neidhardt¹, Elizabeth von Hauff^1,2 (1. Fraunhofer FEP (Germany), 2. Technische Universität Dresden (Germany))

17:45 〜 18:15

[S2-O203-03 (Symposium Invited)] SnO₂-based transparent conducting oxides for invisible light

*Yasushi Hirose¹ (1. Tokyo Metropolitan Univ. (Japan))

18:15 〜 18:30

[S2-O203-04] Low resistivity ZnO transparent films on polymer substrates by Modified Sputtering Method

*Yasuji Yamada¹, Toya Shirasu¹, Yugo Tamai¹, Shuhei Funaki¹ (1. Shimane Univ. (Japan))

Oral Session

[S2-O301] Oral 301

2023年12月13日(水) 10:00 〜 12:00 Session 1 (Room C-1)

Chair: Myung-Gil Kim (Sungkyunkwan Univ.), Yong-Young Noh (Pohang University of Science and Technology (POSTECH))

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10:00 〜 10:45

[S2-O301-01 (Symposium Keynote)] "Depolluting and disinfecting coatings based on modified TiO2 core/shell structures"

*George Kiriakidis^1,2, Vassilis Binas¹ (1. TCM/ IESL/FORTH Inst. (Greece), 2. PCN Materials pc Ltd. (Greece))

10:45 〜 11:15

[S2-O301-02 (Symposium Invited)] Structural Manipulation of Functional Metal Oxides with Atomic-Scale Resolution

*Xuedong Bai¹ (1. Institute of Physics, Chinese Academy of Sciences (China))

11:15 〜 11:45

[S2-O301-03 (Symposium Invited)] Highly transparent solar cell based on 2D materials

*Toshiaki Kato¹ (1. Tohoku Univ. (Japan))

11:45 〜 12:00

[S2-O301-04] Wide-bandgap Perovskite Solar Cells for Multi-tandem Solar Cells

*Fumiyasu Awai¹, Yusuke Ohteki¹, Takashi Koida², Stéphane Collin³, Jean-François Guillemoles³, Yoshitaka Okada¹, Takaya Kubo¹, Hiroshi Segawa¹ (1. The Univ. of Tokyo (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. CNRS (France))

Oral Session

[S2-O302] Oral 302

2023年12月13日(水) 14:00 〜 16:00 Session 1 (Room C-1)

Chair: Guodong Zhu (Fudan University), George Kiriakidis (PCN Materials pc / IESL/FORTH)

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14:00 〜 14:45

[S2-O302-01 (Symposium Keynote)] Halide Semiconductors for Electronic Applications

*Marius Grundmann¹ (1. Universität Leipzig (Germany))

14:45 〜 15:15

[S2-O302-02 (Symposium Invited)] Optimized doping of CuI for transparent p-type electronics

*Myung-Gil Kim¹ (1. Sungkyunkwan Univ. (Korea))

講演取消

15:15 〜 15:30

[S2-O302-03] Doping Copper(I) Iodide to Achieve a Record Figure of Merit for P-Type Transparent Conductor

*Adeem Saeed Mirza¹, Pols Mike², Wiria Soltanpoor¹, Shuxia Tao², Geert Brocks^1,2, Monica Morales-Masis¹ (1. University of Twente (Netherlands), 2. Eindhoven University of Technology (Netherlands))

15:30 〜 16:00

[S2-O302-04 (Symposium Invited)] Development of high-performance Sn Based Halide Perovskite Transistors

*Yong-Young Noh¹ (1. Pohang University of Science and Technology (POSTECH) (Korea))

Oral Session

[S2-O303] Oral 303

2023年12月13日(水) 16:30 〜 18:30 Session 1 (Room C-1)

Chair: Xuedong Bai (Institute of Physics, Chinese Academy of Sciences), Marius Grundmann (Universität Leipzig)

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16:30 〜 17:00

[S2-O303-01 (Symposium Invited)] Ferroelectric-polarization-enhanced Oxide Thin Film Transistors for Multi-mode Sensing

*Guodong Zhu¹, Qun Zhang¹ (1. Fudan University (China))

17:00 〜 17:15

[S2-O303-02] Scalable, Near Room Temperature Processed Indium Oxide and Tellurium Ultrathin Films for Complementary Metal-Oxide Semiconductor Electronics

*Chun Yuen Ho^1,2,3, I. K. M. Reaz Rahman^1,2, Shu Wang^1,2,4, Morten Madsen³, Ali Javey^1,2 (1. Electrical Engineering and Computer Sciences, Univ. of California, Berkeley (United States of America), 2. Materials Sciences Division, Lawrence Berkeley National Lab. (United States of America), 3. Centre for Advanced Photovoltaics and Thin-Film Energy Devices, Mads Clausen Inst., Univ. of Southern Denmark (Denmark), 4. Department of Materials Sci. and Engineering, Univ. of California, Berkeley (United States of America))

17:15 〜 17:30

[S2-O303-03] Room Temperature-Grown Highly Oriented p-Type Nanocrystalline Tellurium Thin-Films Transistors for Large-Scale CMOS circuits

*Jiyong Lee¹ (1. Sungkyunkwan University (Korea))

17:30 〜 17:45

[S2-O303-04] Direct Observation of Weak In-gap States of Cu₂O and CuO Thin Films Studied via Constant Final State Yield Spectroscopy

*Ryotaro Nakazawa¹, Manato Tateno¹, Yui Nohara², Seiji Makita³, Kiyohisa Tanaka³, Junjun Jia⁴, Yuzo Shigesato², Hisao Ishii¹ (1. Chiba Univ. (Japan), 2. Aoyama Gakuin Univ. (Japan), 3. UVSOR Synchrotron Fac. (Japan), 4. Waseda Univ. (Japan))

Short presentations by poster presenters （17:45 〜 18:30）

Poster Session

[S2-P304] Poster 304

2023年12月13日(水) 18:30 〜 20:30 Poster (Annex)

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[S2-P304-01] Possibility of Doping in GaOOH

*Masaya Ichimura¹ (1. Nagoya Institute of Technology (Japan))

[S2-P304-02] Effect of SiO₂ layer on structural and thermochromic properties of VO₂ films fabricated by metal-organic decomposition

*Tomonori Yamada¹, Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹ (1. Chubu Univ. (Japan))

[S2-P304-03] Dopant Control of Solution Processed CuI:S for Highly Conducting p-Type Transparent Electrode

*Minki Son¹, Gahye Kim¹ (1. Sung Kyun Kwan Univ (Korea))

[S2-P304-04] Changes in electrical and optical properties of NiOx and NdNiO₃films by
electrochromic reactions

*Kaho Ikeda¹, Makoto Kashiwagi¹, Yuki Oguchi¹, Yuzo Shigesato¹ (1. Aoyama Gakuin University (Japan))

[S2-P304-05] Fabrication of High-Pressure-Phase Rocksalt-MgSnN₂ Thin Films

*Kaede Makiuchi¹, Fumio Kawamura², JunJun Jia³, Yelim Song², Shunichiro Yata¹, Hitoshi Tampo⁴, Hidenobu Murata⁵, Naoomi Yamada¹ (1. Chubu Univ. (Japan), 2. NIMS (Japan), 3. Waseda Univ. (Japan), 4. AIST (Japan), 5. Osaka Metropolitan Univ. (Japan))

[S2-P304-06] Fabrication of p-n Heterojunctions Using CuI:Zn as p-type Layers

*Kaito Kobayashi¹, Mashu Toyoda¹, Naoomi Yamada¹ (1. Chubu Univ. (Japan))

[S2-P304-07] Nb-Doped Anatase TiO₂ Thin Films Prepared from Aqueous Solutions

*Naito Rento¹, Megumi Ariga¹, Ayaka Nakamura¹, Kaede Makiuchi¹, Tomohito Sudare², Ryo Nakayama², Ryota Shimizu², Kentaro Kaneko³, Yasushi Sato⁴, Taro Hitosugi², Naoomi Yamada¹ (1. Chubu Univ. (Japan), 2. Univ. Tokyo (Japan), 3. Ritsumeikan Univ. (Japan), 4. Okayama Univ. Sci. (Japan))

[S2-P304-08] Structural and optical properties of niobium oxide films deposited by the specially designed reactive sputtering system.

*Yuzo Shigesato¹, Mai Saito¹, Junjun Jia², Daniel Gloess³ (1. Aoyama Gakuin University (Japan), 2. Waseda University (Japan), 3. Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik (Germany))

[S2-P304-09] Tuning Polaron-Induced Coloration in Tungsten Oxide Films

*Junjun Jia¹, Risa Tatewaki², Yuzo Shigesato² (1. Waseda University (Japan), 2. Aoyama Gakuin University (Japan))

[S2-P304-10] Gas sensing properties of WO₃films deposited by reactive rf sputtering

*Keita Yoshida¹, Makoto Kashiwagi¹, Yuki Oguchi¹, Akira Nakamura², Yuzo Shigesato¹ (1. Aoyama Gakuin Univ. (Japan), 2. Minebea Mitsumi Inc. (Japan))

[S2-P304-11] Optical, electrical and thermophysical properties changes by UV irradiation for yttrium oxyhydride films

*Taizo Oomura¹, Takashi Yagi^2,1, Yuichiro Yamashita^2,1, Makoto Kashiwagi¹, Yuki Oguchi¹, Naoyuki Taketoshi^2,1, Yuzo Shigesato¹ (1. Aoyama Gakuin Univ. (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))

[S2-P304-12] Bandgap engineering of Pr³⁺-activated oxynitride perovskite phosphors

*Yasushi Sato¹, Rie Yanamoto¹, Jin Odahara¹, Masato Kakihana² (1. Okayama University of Science (Japan), 2. Osaka University (Japan))

[S2-P304-13] Photoluminescence of red-emitting CaTiO₃:Pr³⁺ and Ca_1-xSr_xTiO₃:Pr³⁺ phosphors prepared by amorphous metal complex method

*Kakeru Imaoka¹, Yasushi Sato¹, Masato Kakihana², Yoshihiro Kusano¹ (1. Okayama University of Science (Japan), 2. Osaka University (Japan))

[S2-P304-14] Photoluminescence of Pr³⁺-doped Ca-based double perovskite oxides prepared by amorphous metal complex method

*Megumi Aguro¹, Mami Shibata¹, Yasushi Sato¹, Masato Kakihana², Takuya Hasegawa³, Shu Yin³ (1. Okayama University of Science (Japan), 2. Osaka University (Japan), 3. Tohoku University (Japan))

[S2-P304-15] Temperature dependence of thermal conductivity of amorphous aluminum oxide thin films with different densities

*Makoto Kashiwagi^1,2, Naoki Noda¹, Yuichiro Yamashita^3,1, Takashi Yagi^3,1, Yuki Oguchi¹, Naoyuki Taketoshi^3,1, Yuzo Shigesato¹ (1. Aoyama Gakuin Univ. (Japan), 2. Japan Sci. and Tech. Agency (Japan), 3. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

[S2-P304-16] Magnetoresistance of Polycrystalline Cd-Ni-O Thin Films Prepared by RF Magnetron Sputtering

*Haruki Tsuchiya¹, Keiga Fukui¹, Kaori Omata¹, Masanori nagao¹, Hiroshi Yanagi¹ (1. Yamanashi Univ. (Japan))

[S2-P304-17] SnS Thin Films Vacuum Evaporated Using SnS and SnS₂ Mixed Powders

*Mahiro Ohmori¹, Tatsuki Yonekura¹, Kaori Omata¹, Keiga Fukui¹, Hiroshi Yanagi¹ (1. Yamanashi Univ. (Japan))

[S2-P304-18] Fabrication and Magnetoresistance of Amorphous Oxide Semiconductor, a-In-Co-O Thin Films

*Yuto Komiyama¹, Keiga Fukui¹, Kaori Omata¹, Masanori Nagao¹, Hiroshi Yanagi¹ (1. University of Yamanashi (Japan))

[S2-P304-19] Surface Morphology of SnS Polycrystalline Thin Films Deposited by Low-Vacuum Evaporation

*Kaito Takei¹, Tatsuki Yonekura¹, Keiga Fukui¹, Kaori Omata¹, Keisuke Arimoto¹ (1. Yamanashi univ. (Japan))

[S2-P304-20] Carrier Concentration and Composition Dependence of Magnetoresistance of Amorphous In-Ni-O Thin Films

*Kazuki Yamamoto¹, Keiga Fukui¹, Kaori Omata¹, Masanori Nagao¹, Hiroshi Yanagi¹ (1. Yamanashi Univ. (Japan))

[S2-P304-21] Charge and Discharge Characteristics of Cr^III-doped Vanadate Glasses Developed for Cathode Active Materials of Lithium-ion Batteries

*Ayaka Fukuchi¹, Shunsuke Matsusako¹, Yuma Morimoto¹, Risa Nakamura¹, Masakazu Haruta¹, Tetsuaki Nishida², Nobuto Oka¹ (1. Kindai Univ. (Japan), 2. Environmental Materials Inst. (Japan))

[S2-P304-22] Study of Crystallization Mechanism of Amorphous WO₃ Films Deposited by RF Sputtering

*Ayaka Fukuchi¹, Junjun Jia², Risa Nakamura¹, Eisuke Magome³, Tetsuaki Nishida⁴, Nobuto Oka¹ (1. Kindai Univ. (Japan), 2. Waseda Univ. (Japan), 3. SAGA Light Source (Japan), 4. Environmental Materials Inst. (Japan))

[S2-P304-23] Study of the Crystallization Mechanism of Amorphous Ga₂O₃ Films Deposited by RF Sputtering

*Risa Nakamura¹, Junjun Jia², Ayaka Fukuchi¹, Eisuke Magome³, Tetsuaki Nishida⁴, Nobuto Oka¹ (1. Kindai Univ. (Japan), 2. Waseda Univ. (Japan), 3. SAGA Light Source (Japan), 4. Environmental Materials Inst. (Japan))

[S2-P304-24] Characterization of Eco-friendly Potassium Vanadate Glasses Containing Iron of Higher Oxidation States

*Risa Nakamura¹, Saeko Matsuo¹, Risa Yamauchi¹, Ayaka Fukuchi¹, Tetsuaki Nishida², Nobuto Oka¹ (1. Kindai Univ. (Japan), 2. Environmental Materials Inst. (Japan))

[S2-P304-25] Electrocatalyst of Co-containing Vanadate Glass Developed for Metal-air Battery

*Nobuto Oka¹, Takahisa Sakuragi¹, Ayaka Fukuchi¹, Hyuga Nakahara¹, Risa Nakamura¹, Masayoshi Yuasa¹, Tetsuaki Nishida² (1. Kindai Univ. (Japan), 2. Environmental Materials Inst. (Japan))

[S2-P304-26] Electrocatalyst of (B, N, or P)-doped Nanocarbon Developed for Metal-air Battery

*Nobuto Oka¹, Ryota Imamura¹, Ayaka Fukuchi¹, Hyuga Nakahara¹, Risa Nakamura¹, Junjun Jia², Masayoshi Yuasa¹, Tetsuaki Nishida³ (1. Kindai Univ. (Japan), 2. Waseda Univ. (Japan), 3. Environmental Materials Inst. (Japan))

[S2-P304-27] Novel cyclic shift of resistance in nitrogen containing titanium oxide films

*Takahisa ICHINOHE¹, Hideki OHNO¹, Seiichi Sato² (1. National Institute of Technology, Tokyo College (Japan), 2. University of Hyougo (Japan))

[S2-P304-28] Preparation of Cl-doped n-Type SnS Using SnI₂ and SnCl₂ Mixed Flux

*Takuro Shiratori¹, Keiga Fukui¹, Kaori Omata¹, Hiroshi Yanagi¹ (1. University of Yamanashi (Japan))

[S2-P304-29] Polymer-encapsulated Graphene/ZnO Heterostructure Based Highly Flexible and Transparent Resistive Memory Devices.

*Shivam Awasthi¹, Anita Mohan¹ (1. Indian Institute of Technology (BHU) Varanasi (India))

[S2-P304-30] Negative Differential Transconductance Transistor based on Oxide Semiconductors for Multi-valued Logic Circuits

*jaehak Lee¹, younsang Kim¹, Jong Chan Shin¹ (1. Seoul national Univ. (Korea))

講演取消

[S2-P304-31] Optimizing dual-layer oxide thin film transistors with Machine-learning assisted design of experiments: Implementation of Bayesian approach to channel structure

*Jiho Lee¹, Jae Hak Lee¹, Minho Jin¹, Ji Soo Kim¹, Haeyeon Lee¹, Jiyeon Kim¹, Chan Lee¹, Jong Chan Shin¹, Wonho You¹, Hyunkyu Yang¹ (1. Seoul National Univ. (Korea))

[S2-P304-32] Verification of Ion Effects on Electrolyte-Gated Synaptic Transistors: An Electrochemical Characterization Study

*Haeyeon Lee¹, Chan Lee¹, Jongchan Shin¹, Hyunkyu Yang¹ (1. Seoul National Univ. (Korea))

[S2-P304-33] Interfacial Ferroelectricity Enabling Modulation of Ion Penetration in Electrolyte-gated Artificial Synapse

*Minho Jin¹, Jae Hak Lee^1,2, Haeyeon Lee¹, Jiyeon Kim¹, Jiho Lee¹, Chan Lee¹, Jong Chan Shin¹, Wonho You^1,2, Hyunkyu Yang¹ (1. Seoul National Univ. (Korea), 2. Samsung Display Co., Ltd. (Korea))

[S2-P304-34] Investigation on Effect of Intermixed Interface on Charge Carrier Dynamics in Solution-Processed Organic Light Emitting Diodes via Impedance Spectroscopy

*Ji Soo Kim¹, Jae Hak Lee¹, Minho Jin¹, Haeyeon Lee¹, Jiho Lee¹, Chan Lee¹, Jong Chan Shin¹, Wonho You¹, Hyunkyu Yang¹, Youn Sang Kim¹, Soon-Hyung Kwon² (1. Seoul National Univ. (Korea), 2. Korea Electronics Tech. Inst. (Korea))

[S2-P304-35] Novel solvent-assisted vacancy engineering in MoS₂ and its application in memory devices

*Jiyeon Kim¹, Jae Hak Lee¹, Minho Jin¹, Haeyeon Lee¹, Ji Soo Kim¹, Jiho Lee¹, Jong Chan Shin¹, Chan Lee¹, Wonho You¹, Hyunkyu Yang¹ (1. Seoul National Univ. (Korea))

[S2-P304-36] Effect of Target Density on Film properties of Al-doped Zinc Oxide Thin Films: A Comparative Study between Powder and Bulk Targets in Sputtering Deposition

*Tamiko Ohshima¹, Yohinobu Matsuda¹, Hiroharu Kawasaki², Yusuke Hibino², Takeshi Ihara², Yoshihito Yagyu², Takahiko Satake³, Shin-ichi Aaoqui³ (1. Nagasaki Univ. (Japan), 2. National Inst. Tech., Sasebo Cllog. (Japan), 3. Sojo Univ. (Japan))

[S2-P304-37] Fabrication and application of high-efficiency BDD thin film by HFCVD

*Songhyeon Lee¹, Miyoung You¹, Pungkeun Song¹ (1. Dept. of Materials Sci. and Eng., Pusan National Univ. (Korea))

Oral Session

[S2-O402] Oral 402

2023年12月14日(木) 14:00 〜 16:00 Session 1 (Room C-1)

Chair: Andreas Klein (Technical University of Darmstadt), Rui-Tao Wen (1)Southern University of Science and Technology, Dept. Materials Science & Engineering, Shenzhen, China)

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14:00 〜 14:30

[S2-O402-01 (Symposium Invited)] New TCMs Based on Silver Nanowire Networks and Conductive Polymers. Application to Flexible Transparent Film Heaters.

*Jean Pierre Simonato^1,2 (1. Univ. Grenoble Alpes (France), 2. CEA Liten (France))

14:30 〜 15:00

[S2-O402-02 (Symposium Invited)] Nanostructures and heterostructure as building block for chemical sensing devices and solid oxides fuel cells

*Elisabetta Comini¹, Dario Zappa¹, Pooi See Lee², Y B Yoon³ (1. University of Brescia (Italy), 2. Nanyang Technological University (Singapore), 3. Korea Advanced Institute of Science and Technology (Korea))

15:00 〜 15:15

[S2-O402-03] Strategy for fabricating ultralow-loss Ag film electrodes with unexpected roles of atomic oxygen interstitials

*Jungheum Yun¹, Eunwook Jeong¹, Eun-Ae Choi¹, Yoshifumi Ikoma², Seung Zeon Han¹, Gun-Hwan Lee¹ (1. Korea Inst. of Materials Sci. (Korea), 2. Kyushu Univ. (Japan))

15:15 〜 15:30

[S2-O402-04] Minimizing electrical and optical losses in Ag and Cu film electrodes by Ge surfactant-mediated growth

*Jungheum Yun¹, Eunwook Jeong¹, Eun-Ae Choi¹, Yoshifumi Ikoma², Seung Zeon Han¹, Gun-Hwan Lee¹ (1. Korea Inst. of Materials Sci. (Korea), 2. Kyushu Univ. (Japan))

15:30 〜 15:45

[S2-O402-05] Passivation performance of silicon oxynitride thin films via reactive sputtering for SAW duplexer

*Yeongha Song¹, Seohan Kim², Jung Chul Lee³, Taek Joo Lee³, Pungkeun Song¹ (1. Dept. of Materials Sci. and Eng., Pusan National Univ. (Korea), 2. Inst. of Materials Tech., Pusan National Univ. (Korea), 3. Tech. Res. Inst., SAWNICS Inc. (Korea))

15:45 〜 16:00

[S2-O402-06] Emerging high-frequency microelectronics and photonics applications for wide band gap nanoscale oxides

*Mircea Modreanu¹, Mircea Dragoman², Martino Aldrigo², Maria Losurdo³, Yael Gutiérrez⁴ (1. Tyndall National Institute (Ireland), 2. IMT Bucharest (Romania), 3. CNR-ICMATE (Italy), 4. University of Oviedo (Spain))

Oral Session

[S2-O403] Oral 403

2023年12月14日(木) 16:30 〜 18:30 Session 1 (Room C-1)

Chair: Jean Pierre Simonato (Univ. Grenoble Alpes / CEA Liten), TAE GEUN KIM (Korea University)

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16:30 〜 17:00

[S2-O403-01 (Symposium Invited)] Performance Degradation and Rejuvenation in Electrochromic Oxides

*Rui-Tao Wen¹ (1. 1)Southern University of Science and Technology, Dept. Materials Science & Engineering, Shenzhen, China (China))

17:00 〜 17:30

[S2-O403-02 (Symposium Invited)] Advanced applications of wide gap semiconductor using hybrid structure

*Pungkeun Song¹, seohan kim^2,1, Lars Österlund² (1. Pusan National University (Korea), 2. Uppsala university (Sweden))

17:30 〜 17:45

[S2-O403-03] Sputtered Zinc Oxides as Electron Transport Layers for Non-fullerene Acceptors-based Organic Photovoltaics

*Chun Yuen Ho¹, Um Kanta Aryal¹, Morten Madsen¹ (1. Centre for Advanced Photovoltaics and Thin-Film Energy Devices, Mads Clausen Inst., Univ. of Southern Denmark (Denmark))

17:45 〜 18:00

[S2-O403-04] Ultrafast Carrier Dynamics in Degenerated InN Films

*Junjun Jia¹, Takashi Yagi², Naoomi Yagi Yamada³, Toshiki Makimoto⁴ (1. Waseda University (Japan), 2. AIST (Japan), 3. Chubu University (Japan), 4. Waseda University (Japan))

18:00 〜 18:15

[S2-O403-05] Thermal Neutron Scintillation Improvement of Ce:Li₆Y(BO₃)₃Single Crystals

*Dongsheng Yuan¹, Encarnación G. Víllora¹, Kiyoshi Shimamura¹ (1. National Institute for Materials Science (NIMS) (Japan))

18:15 〜 18:30

[S2-O403-06] Luminescent-down shifting properties of Eu²⁺-doped Sr-Si-Al-O-N glass films synthesized via the sol-gel method and ammonolysis

*Xun Liu^1,2,3, Jian Xu¹, Kohsei Takahashi¹, Takashi Takeda¹, Masatoshi Yanagida¹, Tetsuo Kishi², Tetsuji Yano², Hiroyo Segawa^1,2, Naoki Ohashi^1,3 (1. National Institute for Materials Science (Japan), 2. Tokyo Insitute of Technology (Japan), 3. Kyushu University (Japan))

セッション一覧

S. Co-Sponsored Topics » [S-2] 9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023)

[S2-O201] Oral 201

[S2-O202] Oral 202

[S2-O203] Oral 203

[S2-O301] Oral 301

[S2-O302] Oral 302

[S2-O303] Oral 303

[S2-P304] Poster 304

[S2-O402] Oral 402

[S2-O403] Oral 403

認証